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Dependence of the photoluminescence intensity of Tb(3+) ions in thin films on the deposition conditions

Abstract : This paper presents results on the deposition and characterization of thin silica and alumina films containing TP(3+) ions, prepared by magnetron co-sputtering The films are intended for applications as spectral converters of the solar spectrum in thin film silicon solar cells The dependence of the photoluminescence intensity in the films on the deposition parameters and position on the substrate is studied, in order to assess the suitability of this method of preparation for the stated purpose, and to optimize the deposition conditions At a distance of 7 5 cm between the target and the growing film, strong dependence of the photoluminescence (PL) intensity and film thickness on the substrate radial position is observed The increased PL intensity over the erosion zone is explained by bombardment of the growing film by particles from the plasma, which causes a better dispersion of Tb ions and less clustering However, greater distances between the target and substrates should be used for achieving a homogeneous PL intensity and thickness
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Contributor : Christine Hadrossek <>
Submitted on : Wednesday, March 7, 2012 - 5:14:51 PM
Last modification on : Wednesday, September 16, 2020 - 4:17:41 PM

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  • HAL Id : in2p3-00677281, version 1

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M. Sendova-Vassileva, D. Dimova-Malinovska, O. Angelov, J. C. Pivin. Dependence of the photoluminescence intensity of Tb(3+) ions in thin films on the deposition conditions. Journal of Optoelectronics and Advanced Materials, 2009, 11, pp.1335-1338. ⟨in2p3-00677281⟩

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