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Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETs

L.E. Calvet 1 G.A. Meshkov E. Strupiechonski 1 D. Toubestani 1 J.P. Snyder F. Fortuna 2 Wolfgang Wernsdorfer 3
2 CSNSM PS2
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
Abstract : Art overview of our technique to explore single defects in silicon using a novel transistor geometry, the Schottky barrier MOSFET, is described. In this device the doped source and drain regions of a conventional MOSFET are replaced with metallic contacts. At low temperatures electron transport is dominated by direct tunneling through the space charge region formed next to the metal/semiconductor interface. If single impurities or defects are present in this region, transport reveals resonant tunneling peaks that allow investigations of the magnetic field dependence and excited states. Here we discuss different experiments where we have on separate occasions observed defects that may be related to Pt, B and Tb. (C) 2009 Elsevier B.V. All rights reserved.
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Submitted on : Wednesday, March 28, 2012 - 3:28:16 PM
Last modification on : Thursday, November 19, 2020 - 1:01:20 PM

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L.E. Calvet, G.A. Meshkov, E. Strupiechonski, D. Toubestani, J.P. Snyder, et al.. Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETs. Physica B: Condensed Matter, Elsevier, 2009, 404, pp.5136-5139. ⟨10.1016/j.physb.2009.08.319⟩. ⟨in2p3-00683377⟩

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