Skip to Main content Skip to Navigation
Conference papers

Microstructural study of Fe-implanted SiC: Comparison of different post-implantation treatments

A. Declemy 1 C. Dupeyrat 1 L. Thome 2 A. Debelle 2
2 CSNSM PCI
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Abstract : Silicon carbide (SiC) could be I good candidate for Diluted Magnetic Semiconductor (DMS). In this paper we report on preliminary results on the microstructure of Fe-implanted 6H-SiC subsequently submitted to Rapid Thermal Annealing (RTA), laser processing in the solid phase and swift heavy ion irradiation and analyzed by means of X-ray diffraction (XRD) and Rutherford backscattering and channeling (RBS/C).
Complete list of metadata

http://hal.in2p3.fr/in2p3-00684924
Contributor : Christine Hadrossek <>
Submitted on : Tuesday, April 3, 2012 - 3:02:04 PM
Last modification on : Wednesday, September 16, 2020 - 5:43:39 PM

Identifiers

Collections

Citation

A. Declemy, C. Dupeyrat, L. Thome, A. Debelle. Microstructural study of Fe-implanted SiC: Comparison of different post-implantation treatments. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.461-464, ⟨10.4028/www.scientific.net/MSF.615-617.461⟩. ⟨in2p3-00684924⟩

Share

Metrics

Record views

106