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Conference papers

Synthesis and characterization of nc-Ge embedded in SiO2/Si matrix

N.S. Rao S. Dhamodaran A.P. Pathak D. Kabiraj S.A. Khan B.K. Panigrahi K.G.M. Nair B. Sundaravel J.C. Pivin 1 D.K. Avasthi
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Abstract : We have prepared germanium nanoparticles embedded in SiO2 matrix by atom beam co-sputtering (ABS) of Ge+SiO2 on Si substrate. The as-deposited films were annealed at various temperatures in Ar+H2 atmosphere and irradiated with various energies with fixed fluence. The pristine and irradiated samples were characterized by Raman, X-ray diffraction and atomic force microscopy (AFM). Rutherford back scattering (RBS) was used to quantify the concentration of Ge in the SiO2 matrix and the film thickness. Raman studies of the films indicate the formation of Ge crystallites as a result of swift heavy ion (SHI) irradiation. Moreover, the crystalline nature of Ge improves with an increase in energy. Glancing angle X-ray diffraction and Raman results also confirm the presence of Ge crystallites in the irradiated samples. Similarly, 400keV Ge+ ions implanted into silicon substrate at higher fluence at 573K have been irradiated with 100MeV Au8+ions at RT. These irradiated implanted samples were subsequently characterized by XRD and Raman to understand the crystallization behavior. We also studied the surface morphology of a high-energy irradiated sample by AFM. The irradiation results were compared with those obtained by thermal annealing in ABS. The basic mechanism for crystallization induced by SHI in these films has been investigated.
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Submitted on : Wednesday, May 2, 2012 - 1:51:03 PM
Last modification on : Wednesday, September 16, 2020 - 5:42:21 PM




N.S. Rao, S. Dhamodaran, A.P. Pathak, D. Kabiraj, S.A. Khan, et al.. Synthesis and characterization of nc-Ge embedded in SiO2/Si matrix. 2nd International Meeting on Recent Developments in the Study of Radiation Effects in Matters, 2008, Fodele, Greece. pp.452-459, ⟨10.1080/10420150902949845⟩. ⟨in2p3-00693314⟩



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