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Transition from smoothing to roughening of ion-eroded GaSb surfaces

A. Keller A. Biermanns G. Carbone 1 J. Grenzer S. Facsko O. Plantevin 2 R. Gago T.H. Metzger 1
1 ESRF - European Synchrotron Radiation Facility
2 CSNSM PS2
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
Abstract : During ion sputtering of GaSb(100) surfaces a transient behavior from initial smoothing to roughening accompanied by self-organized pattern formation has been observed using in situ x-ray reflectivity and grazing incidence small angle scattering. The induced patterns show hexagonally ordered nanodot arrays with a spatial periodicity of 30 nm. The correlation length of the pattern increases with ion fluence. In the framework of the Bradley-Harper model [R. M. Bradley and J. M. E. Harper, J. Vac. Sci. Technol. A 6, 2390 (1988)], where the dot pattern formation results from an interplay of surface roughening due to sputtering and surface smoothing due to diffusion, the initial smoothing behavior is explained by the same surface diffusion processes as the pattern formation.
Keywords : gallium compounds III-V semiconductors ion beam effects reflectivity surface diffusion surface roughness X-ray reflection X-ray scattering X-RAY-SCATTERING
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http://hal.in2p3.fr/in2p3-00693385
Contributor : Christine Hadrossek <>
Submitted on : Wednesday, May 2, 2012 - 3:40:31 PM
Last modification on : Wednesday, September 16, 2020 - 5:43:24 PM

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A. Keller, A. Biermanns, G. Carbone, J. Grenzer, S. Facsko, et al.. Transition from smoothing to roughening of ion-eroded GaSb surfaces. Applied Physics Letters, American Institute of Physics, 2009, 94, pp.193103. ⟨10.1063/1.3136765⟩. ⟨in2p3-00693385⟩

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