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Hot Carrier Velocities in Doped and in Ultra-pure Germanium Crystals at Millikelvin Temperatures

J. Domange 1 E. Olivieri 2 A. Broniatowski 1
1 CSNSM PS1
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
2 CSNSM INSTR
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Abstract : The velocity laws of electrons and holes in germanium single crystals at millikelvin temperatures are determined as a function of the electric field in the aOE (c) 001 > orientation, based on time-of-flight measurements in cryogenic coplanar grid Ge detectors. Results obtained in two n-type crystals (|N (a) -N (d) |< 10(10) cm(-3) and doped to 10(11) cm(-3)) are compared with the experimental data from previous investigations, and shown to be consistent with Monte-Carlo simulations of carrier transport.
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http://hal.in2p3.fr/in2p3-00703201
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Submitted on : Friday, June 1, 2012 - 10:37:04 AM
Last modification on : Wednesday, September 16, 2020 - 5:38:10 PM

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J. Domange, E. Olivieri, A. Broniatowski. Hot Carrier Velocities in Doped and in Ultra-pure Germanium Crystals at Millikelvin Temperatures. Journal of Low Temperature Physics, Springer Verlag (Germany), 2012, 167, pp.1149-1153. ⟨10.1007/s10909-012-0535-5⟩. ⟨in2p3-00703201⟩

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