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Nanometric Bubble Formation in SiO2 by Ion Implantation: Influence of the Substrate

E. Oliviero 1 B. Décamps 1 M.-O. Ruault 1
1 CSNSM PS1
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
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http://hal.in2p3.fr/in2p3-00703743
Contributor : Christine Hadrossek <>
Submitted on : Monday, June 4, 2012 - 11:52:19 AM
Last modification on : Tuesday, December 1, 2020 - 1:06:02 PM

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  • HAL Id : in2p3-00703743, version 1

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E. Oliviero, B. Décamps, M.-O. Ruault. Nanometric Bubble Formation in SiO2 by Ion Implantation: Influence of the Substrate. Indo-French conference on Nano-Structuring by Ion Beams, 2009, Bhubaneswar, India. pp.173-180. ⟨in2p3-00703743⟩

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