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Optical properties of GaN and GaN/AlN nanowires: the effect of doping and structural defects

Abstract : We report on the optical properties of different classes of nitride-based nanowire systems grown by plasma assisted molecular beam epitaxy (PA-MBE) on Si(111) substrates at temperature T=780°C. Micro-photoluminescence (micro-PL) spectroscopy has been performed on homogeneous GaN nanowires with different doping type and distribution, as well as on nanowires containing AlN/GaN heterostructures. The Micro-PL spectrum of the individual nanowire has been correlated to the transmission electron microscopy (TEM) image of the same nano-object, in order to investigate the influence of structural defects on the radiative emission lines. Doping is found to enhance the sub-bandgap radiative paths such as the donoracceptor pair (DAP) related lines found at energies below E=3.26 eV. Other sub-bandgap emission lines, particularly those centred around 3.41-3.42 eV, are related to surface states and are the dominant emission in systems of coalesced nanowires. Finally, the presence of extended line defects has been correlated to a strong reduction of the PL radiative efficiency.
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Submitted on : Wednesday, August 22, 2012 - 12:22:26 PM
Last modification on : Monday, December 21, 2020 - 12:02:01 PM

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L. Rigutti, F. Fortuna, M. Tchernycheva, A. de Luna Bugallo, G. Jacopin, et al.. Optical properties of GaN and GaN/AlN nanowires: the effect of doping and structural defects. 8th International Conference on Nitride Semiconductors (ICNS8), Oct 2009, Jeju, South Korea. pp.2233-2235, ⟨10.1002/pssc.200983472⟩. ⟨in2p3-00724691⟩



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