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Nanocavities induced by neon Plasma Based Ion Implantation in silicon

M.F. Beaufort 1 J-F. Barbot 1 M. Drouet 1 S. Peripolli 1 E. Oliviero 2 L. Amaral P.F.P. Fichtner
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Abstract : Nanocavities formed by neon Plasma Based Ion Implantation (PBII) in Si have been studied in comparison with conventional ion implantation (CI). Interstitial-type defects are also investigated. To avoid amorphisation, neon implantations were performed at 250 °C with a fluence of ≈5 × 1016 cm−2. Using PBII a rather uniform layer of cavities is observed from the surface while a three layer structure is present using the CI. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. After annealing at 800 °C, bubbles grow and extended defects identified as {1 1 3} defects are formed.
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Submitted on : Friday, August 24, 2012 - 3:26:59 PM
Last modification on : Tuesday, December 1, 2020 - 1:06:04 PM




M.F. Beaufort, J-F. Barbot, M. Drouet, S. Peripolli, E. Oliviero, et al.. Nanocavities induced by neon Plasma Based Ion Implantation in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2007, 257, pp.750-752. ⟨10.1016/j.nimb.2007.01.128⟩. ⟨in2p3-00725284⟩



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