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Journal articles
Nanocavities induced by neon Plasma Based Ion Implantation in silicon
Abstract : Nanocavities formed by neon Plasma Based Ion Implantation (PBII) in Si have been studied in comparison with conventional ion implantation (CI). Interstitial-type defects are also investigated. To avoid amorphisation, neon implantations were performed at 250 °C with a fluence of ≈5 × 1016 cm−2. Using PBII a rather uniform layer of cavities is observed from the surface while a three layer structure is present using the CI. However, the mean diameter of cavities is smaller due to the interaction with the interstitial-type defects. After annealing at 800 °C, bubbles grow and extended defects identified as {1 1 3} defects are formed.
http://hal.in2p3.fr/in2p3-00725284
Contributor : Christine Hadrossek <>
Submitted on : Friday, August 24, 2012 - 3:26:59 PM
Last modification on : Tuesday, December 1, 2020 - 1:06:04 PM
Contributor : Christine Hadrossek <>
Submitted on : Friday, August 24, 2012 - 3:26:59 PM
Last modification on : Tuesday, December 1, 2020 - 1:06:04 PM