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Recrystallization of amorphous ion implanted silicon carbide after thermal annealing

S. Miro 1 J.-M. Costantini 1 S. Sorieul 2 L. Gosmain 1 L. Thomé 3
CENBG - Centre d'Etudes Nucléaires de Bordeaux Gradignan
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Abstract : Single crystals of 6H-SiC were implanted at room temperature with 4-MeV Au ions to a fluence of 1015cm 2. Raman spectra showed that full amorphization was achieved. The recrystallization process was studied by micro-Raman spectrometry after isochronal thermal annealing between 700 and 1500 C. The spectra permitted the evolution upon annealing of Si-C bonds, and also of Si-Si and C-C bonds, to be followed. Amorphous phase relaxation takes place below 700 C; then recrystallization of the 6H polytype sets in at 700 C. At 900 C crystallites with different crystalline states are formed. Moreover, Raman spectra provide evidence of graphitic nanocluster formation at 1500 C.
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Submitted on : Monday, October 8, 2012 - 2:49:44 PM
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S. Miro, J.-M. Costantini, S. Sorieul, L. Gosmain, L. Thomé. Recrystallization of amorphous ion implanted silicon carbide after thermal annealing. Philosophical Magazine Letters, Taylor & Francis, 2012, 92, pp.633-639. ⟨10.1080/09500839.2012.713133⟩. ⟨in2p3-00739573⟩



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