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Poster communications

Influence of ion energy on damage induced in silicon carbide single crystals probed by positron lifetime and Doppler-Broadening spectroscopies

F. Linez 1 A. Gentils 2 W. Egger P. Desgardin 1 M.-F. Barthe 1
2 CSNSM PS2
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
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Poster communications
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http://hal.in2p3.fr/in2p3-00771739
Contributor : Christine Hadrossek <>
Submitted on : Wednesday, January 9, 2013 - 12:16:54 PM
Last modification on : Thursday, January 7, 2021 - 10:54:03 AM

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  • HAL Id : in2p3-00771739, version 1

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F. Linez, A. Gentils, W. Egger, P. Desgardin, M.-F. Barthe. Influence of ion energy on damage induced in silicon carbide single crystals probed by positron lifetime and Doppler-Broadening spectroscopies. SLOPOS-12 International Workshop on Slow Positron Beam Techniques, Aug 2010, Magnetic Island, Australia. ⟨in2p3-00771739⟩

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