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Analysis of the accumulation of radiation damage in selected crystals

Abstract : Damage accumulation in SiC and MgAl2O4 was interpreted in the framework of the multi step damage accumulation (MSDA) model. The concept is based on the assumption that damage build-ups occur in several stages, each step being triggered by the destabilization of the current structural organization of the material. The analysis of the damaging process may thus be regarded as an identification of the current structure at each subsequent step of the damage build-up and of the forces leading to the destabilization of current structure. The analysis of mechanical properties provides a useful tool for this purpose by allowing the recognition of the mechanisms of phase transformations and helping to clarify the detailed structures of irradiated materials. (C) 2008 Elsevier B.V. All rights reserved.
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J. Jagielski, L. Thome, P. Aubert, O. Maciejak, A. Piatkowska, et al.. Analysis of the accumulation of radiation damage in selected crystals. 14th International Conference on Radiation Effects in Insulators (REI-14), Aug 2007, Caen, France. pp.2902-2905, ⟨10.1016/j.nimb.2008.03.136⟩. ⟨in2p3-00825329⟩

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