Skip to Main content Skip to Navigation
Conference papers

Determination of defects in 6H-SiC single crystals irradiated with 20 MeV Au ions

A. Gentils 1 M. F. Barthe 2 L. Thome 3 M. Behar 4
1 CSNSM PS2
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
3 CSNSM PCI
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Abstract : In this paper, the determination of the defects induced by 20 MeV Au irradiations in hexagonal silicon carbide single crystals is discussed. The evolution of the irradiation-induced defects as a function of the ion fluence has been studied as a function of depth below the surface using 0.5-25 keV positron beam based Doppler annihilation-ray broadening spectrometry. Results show the detection of two different kinds of defects, depending on the ion fluence. (C) 2008 Elsevier B.V. All rights reserved.
Complete list of metadatas

http://hal.in2p3.fr/in2p3-00825464
Contributor : Christine Hadrossek <>
Submitted on : Thursday, May 23, 2013 - 5:00:28 PM
Last modification on : Friday, November 27, 2020 - 6:48:04 AM

Identifiers

Collections

Citation

A. Gentils, M. F. Barthe, L. Thome, M. Behar. Determination of defects in 6H-SiC single crystals irradiated with 20 MeV Au ions. 11th Workshop on Slow Position Beam Techniques for Solids and Surfaces, Jul 2007, Orléans, France. pp.78-80, ⟨10.1016/j.apsusc.2008.05.166⟩. ⟨in2p3-00825464⟩

Share

Metrics

Record views

112