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Tailoring of SiC nanoprecipitates formed in Si

G. Velisa 1, 2 P. Trocellier 2 L. Thome 3 S. Vaubaillon 4 S. Miro 2 Y. Serruys 2 E. Bordas 2 E. Meslin 2 S. Mylonas 5 P. E. Coulon 6 F. Lepretre 2 A. Pilz 2 L. Beck 2
1 NIPNE - Horia Hulubei National Institute of Physics and Nuclear Engineering
2 SRMP - Service de recherches de métallurgie physique
3 CSNSM PCI
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
4 Lab JANNUS
SRMP - Service de recherches de métallurgie physique : DEN/DMN/SRMP
5 CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
6 LSI - Laboratoire des Solides Irradiés
Abstract : The SiC synthesis through single-beam of C+, and simultaneous-dual-beam of C+ & Si+ ion implantations into a Si substrate heated at 550 degrees C has been studied by means of three complementary analytical techniques: nuclear reaction analysis (NRA), Raman, and transmission electron microscopy (TEM). It is shown that a broad distribution of SiC nanoprecipitates is directly formed after simultaneous-dual-beam (520-keV C+ & 890-keV Si+) and single-beam (520-keV C+) ion implantations. Their shape appear as spherical (average size similar to 4-5 nm) and they are in epitaxial relationship with the silicon matrix. (C) 2013 Elsevier B.V. All rights reserved.
Keywords : IBAS Nanometer-sized SiC precipitates NRA Raman TEM ION-BEAM SYNTHESIS EXPERIMENTAL VALIDATION 3C-SIC LAYERS SILICON IMPLANTATION CARBON JANNUS IRRADIATION MECHANISMS PLATFORM
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Conference papers
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http://hal.in2p3.fr/in2p3-00852734
Contributor : Christine Hadrossek <>
Submitted on : Thursday, August 29, 2013 - 12:06:48 PM
Last modification on : Wednesday, September 16, 2020 - 5:42:11 PM

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CSNSM | CNRS | X-LSI | IN2P3 | X | DSM-IRAMIS | CEA | DEN | CEA-DRF | X-DEP-PHYS | DEN-SACLAY

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G. Velisa, P. Trocellier, L. Thome, S. Vaubaillon, S. Miro, et al.. Tailoring of SiC nanoprecipitates formed in Si. The 18th International Conference on Ion Beam Modifications of Materials (IBMM2012), Sep 2012, Jinan, China. pp.165-170, ⟨10.1016/j.nimb.2012.12.089⟩. ⟨in2p3-00852734⟩

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