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Chemically sensitive amorphization process in the nanolaminated Cr2AC (A = Al or Ge) system from TEM in situ irradiation

Matthieu Bugnet 1 V. Mauchamp 1 E. Oliviero 2 M. Jaouen 1 T. Cabioc'H 1
2 CSNSM SEMI
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Abstract : The effect of 320 keV Xe2+ ion-irradiation in Cr2AlC and Cr2GeC is investigated in situ in the transmission electron microscope. Both compounds amorphize at moderate fluences (1013-1014 Xe cm−2) but exhibit different amorphization mechanisms, bearing witness of the major influence of the chemical composition of the nanolaminated Mn+1AXn phases. It is proposed that amorphization takes place via a direct impact amorphization process in Cr2GeC whereas it is governed by a defect accumulation process in Cr2AlC.
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http://hal.in2p3.fr/in2p3-00853276
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Submitted on : Thursday, August 22, 2013 - 12:05:41 PM
Last modification on : Wednesday, September 16, 2020 - 5:43:39 PM

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Matthieu Bugnet, V. Mauchamp, E. Oliviero, M. Jaouen, T. Cabioc'H. Chemically sensitive amorphization process in the nanolaminated Cr2AC (A = Al or Ge) system from TEM in situ irradiation. Journal of Nuclear Materials, Elsevier, 2013, 441, pp.133-137. ⟨10.1016/j.jnucmat.2013.05.028⟩. ⟨in2p3-00853276⟩

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