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Pseudomorphic SiGe/Si(001) layers synthesized by gas immersion laser doping

F. Fossard 1 J. Boulmer 1 D. Debarre 1 J. L. Perrossier 1 C. Bachelet 2 F. Fortuna 3 V. Mathet 1 D. Bouchier 1
2 CSNSM SEMI
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
3 CSNSM PS2
CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
Abstract : We report on the synthesis of SiGe layers on silicon by gas immersion laser doping. GeCl(4) molecules are adsorbed on the surface and further incorporated into the Si top layer by a pulsed laser induced melt/regrowth process. Structural and chemical characterizations of the SiGe layers have been performed by using complementarily Rutherford backscattering spectrometry and x-ray Diffraction which indicate that Ge incorporation in the Si matrix results in a fully strained SiGe layer with gradual Ge concentrations reaching up to 18.5% near the surface. (C) 2008 American Institute of Physics.
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Submitted on : Wednesday, August 28, 2013 - 1:51:29 PM
Last modification on : Wednesday, September 16, 2020 - 5:42:43 PM

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F. Fossard, J. Boulmer, D. Debarre, J. L. Perrossier, C. Bachelet, et al.. Pseudomorphic SiGe/Si(001) layers synthesized by gas immersion laser doping. Applied Physics Letters, American Institute of Physics, 2008, 93, pp.021911. ⟨10.1063/1.2956674⟩. ⟨in2p3-00854943⟩

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