Effects of irradiation of energetic heavy ions on digital pulse shape analysis with silicon detectors

Abstract : Detected energy, charge rise-time and pulse shape identfication capabilities of nTD silicon detectors under prolonged irradiation by energetic heavy ions have been studied. Sizeable effects on the amplitude and the risetime of the charge signal have been found for detectors irradiated with large fluences of stopped heavy ions, while much weaker effects were observed for punchingthrough ions. The robustness of ion identification based on digital pulse shape techniques has been evaluated.
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Contributor : Michel Lion <>
Submitted on : Tuesday, September 3, 2013 - 10:05:56 AM
Last modification on : Tuesday, February 19, 2019 - 11:16:01 AM

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  • HAL Id : in2p3-00855243, version 1
  • CERN : 1537365

Citation

S. Barlini, S. Carboni, N. Le Neindre, M. Bini, B. Borderie, et al.. Effects of irradiation of energetic heavy ions on digital pulse shape analysis with silicon detectors. The 13th International Conference on Nuclear Reaction Mechanisms, 2012, Varenna, Italy. pp.415-419. ⟨in2p3-00855243⟩

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