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SiMS measurements & Simulation, Varied bias rail geometry structures characterization and TCAD simulation

E. Gkougkousis 1
1 Atlas
LAL - Laboratoire de l'Accélérateur Linéaire
Abstract : Secondary Ion Mass Spectroscopy measurements, conducted to calibrate the new edgeless pixel production for the High Luminosity upgrade of the LHC, are being compared with TCAD simulated doping profiles for n and p implanted wafers. On the same context, simulation and characterization of varied bias rail geometry structures is being presented in an attempt to understand and compensate for the efficiency drop issue under the biasing gird region. Through 3D profile and field simulation, the structures under investigation are being compared with experimental measurements.
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http://hal.in2p3.fr/in2p3-01006030
Contributor : Sabine Starita <>
Submitted on : Friday, June 13, 2014 - 3:15:17 PM
Last modification on : Wednesday, September 16, 2020 - 5:38:46 PM

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  • HAL Id : in2p3-01006030, version 1

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IN2P3 | LAL | CNRS

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E. Gkougkousis. SiMS measurements & Simulation, Varied bias rail geometry structures characterization and TCAD simulation. 24th RD50 Workshop - Radiation hard semiconductor devices for very high luminosity colliders, Jun 2014, Bucarest, Romania. ⟨in2p3-01006030⟩

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