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Investigation of Mg2(Si,Sn) thin films deposited by microwave plasma-assisted co-sputtering

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in2p3-01009968 , version 1 (19-06-2014)

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  • HAL Id : in2p3-01009968 , version 1

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C. Prahoveanu, A. Lacoste, L. Laversenne, C. de Vaulx, K. Azzouz. Investigation of Mg2(Si,Sn) thin films deposited by microwave plasma-assisted co-sputtering. GDR Thermoélectricité 2013, 2013, Nancy, France. ⟨in2p3-01009968⟩
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