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In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

Maxime Vallet 1 J. F. Barbot 1 E. Oliviero 2 S. E. Donnelly J.A Hinks M. F. Beaufort 1
2 CSNSM SEMI
CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
Abstract : In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9 eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs. (C) 2014 AIP Publishing LLC.
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Submitted on : Monday, August 25, 2014 - 10:44:48 AM
Last modification on : Wednesday, September 16, 2020 - 5:42:41 PM

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Maxime Vallet, J. F. Barbot, E. Oliviero, S. E. Donnelly, J.A Hinks, et al.. In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply. Journal of Applied Physics, American Institute of Physics, 2014, 115, pp.223515. ⟨10.1063/1.4883766⟩. ⟨in2p3-01057683⟩

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