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Hot Carrier Trapping in High-Purity and Doped Germanium Crystals at Millikelvin Temperatures

M. C. Piro 1 A. Broniatowski 2 S. Marnieros 1 L. Dumoulin 1 E. Olivieri 1
2 CSNSM PS1
CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière, CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
Abstract : A new set of experimental data is presented for the mean drift lengths and the drift velocities of hot electrons and holes as a function of the electric field in ultra-pure and in lightly doped (n- and p-type) germanium single crystals at mK temperatures. Measurements are made in the field range between 0.1 and 15 V/cm, typical for the operation of cryogenic germanium detectors for dark matter search. The analysis of the experimental data strongly suggests that the dominant trapping centers are the dopant species in the neutral state.
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http://hal.in2p3.fr/in2p3-01061712
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Submitted on : Monday, September 8, 2014 - 12:38:11 PM
Last modification on : Wednesday, September 16, 2020 - 5:42:44 PM

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M. C. Piro, A. Broniatowski, S. Marnieros, L. Dumoulin, E. Olivieri. Hot Carrier Trapping in High-Purity and Doped Germanium Crystals at Millikelvin Temperatures. Journal of Low Temperature Physics, Springer Verlag (Germany), 2014, 176, pp.796-801. ⟨10.1007/s10909-014-1088-6⟩. ⟨in2p3-01061712⟩

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