3D Simulation and Doping Profile Measurements of Planar Pixel Sensors

E. Gkougkousis 1 A. Lounis 2 C. Nellist 2
1 Atlas
LAL - Laboratoire de l'Accélérateur Linéaire
Abstract : Innovative edgeless planar pixel sensors for the High Luminosity LHC upgrade are under production. Through 3D TCAD simulation of the production process and electric field at the inside of the detector, combined with SiMS measurements, a calibration and complete insight of the new structures is achieved. Comparison between simulated data and experimental measurements allow a calibration of the process and a better understanding of the production. In addition, innovative bias grid geometries in classical planar pixel structures are studied a 3D approach while the question of efficiency drop in the region of the bias grid is addressed.
Type de document :
Poster
TWEPP 2014 - Topical Workshop on Electronics for Particle Physics, Sep 2014, Aix en Provence, France
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http://hal.in2p3.fr/in2p3-01070558
Contributeur : Sabine Starita <>
Soumis le : mercredi 1 octobre 2014 - 16:08:59
Dernière modification le : jeudi 11 janvier 2018 - 06:26:23

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  • HAL Id : in2p3-01070558, version 1

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E. Gkougkousis, A. Lounis, C. Nellist. 3D Simulation and Doping Profile Measurements of Planar Pixel Sensors. TWEPP 2014 - Topical Workshop on Electronics for Particle Physics, Sep 2014, Aix en Provence, France. 〈in2p3-01070558〉

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