In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates

Abstract : Growing self-assembled silicon nanowires (SiNWs) into precise locations represents a critical capability to scale up SiNW-based functionalities. We here report a novel epitaxy growth phenomenon and strategy to fabricate orderly arrays of self-aligned in-plane SiNWs on Si(100) substrates following exactly the underlying crystallographic orientations. We observe also a rich set of distinctive growth dynamics/modes that lead to remarkably different morphologies of epitaxially grown SiNWs/or grains under variant growth balance conditions. High-resolution transmission electron microscopy cross-section analysis confirms a coherent epitaxy (or partial epitaxy) interface between the in-plane SiNWs and the Si(100) substrate, while conductive atomic force microscopy characterization reveals that electrically rectifying p-n junctions are formed between the p-type doped in-plane SiNWs and the n-type c-Si(100) substrate. This in-plane epitaxy growth could provide an effective means to define nanoscale junction and doping profiles, providing a basis for exploring novel nanoelectronics.
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Nano Letters, American Chemical Society, 2014, 14 (issue : 11), pp.6469-6474. 〈10.1021/nl503001g〉
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http://hal.in2p3.fr/in2p3-01100533
Contributeur : Emilie Bonnardel <>
Soumis le : mardi 6 janvier 2015 - 15:43:19
Dernière modification le : mardi 22 mai 2018 - 21:48:09

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Lw Yu, Mk Xu, J Xu, Zg Xue, Z Fan, et al.. In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates. Nano Letters, American Chemical Society, 2014, 14 (issue : 11), pp.6469-6474. 〈10.1021/nl503001g〉. 〈in2p3-01100533〉

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