Interdiffusion processes at irradiated Cr/Si interfaces

L. Luneville; L. Largeau; C. Deranlot; J. Ribis; F. Ott; N. Moncoffre; G. Baldinozzi; D. Simeone

doi:10.1016/j.jallcom.2014.11.121

Journal articles

Interdiffusion processes at irradiated Cr/Si interfaces

L. Luneville ¹ L. Largeau ² C. Deranlot ³ J. Ribis ⁴ F. Ott ⁵ N. Moncoffre ⁶ G. Baldinozzi ⁷ D. Simeone ⁴

1 LLPR - Laboratoire de Logiciels pour la Physique des Réacteurs

SERMA - Service des Réacteurs et de Mathématiques Appliquées : DEN/DM2S/SERMA

2 LPN - Laboratoire de photonique et de nanostructures

3 UMPhy CNRS/THALES - Unité mixte de physique CNRS/Thales

4 LA2M - Laboratoire d'Analyse Microstructurale des Matériaux

SRMA - Service des Recherches Métallurgiques Appliquées : DEN/DMN/SRMA

5 LLB - UMR 12 - Laboratoire Léon Brillouin

6 IPNL - Institut de Physique Nucléaire de Lyon

7 SPMS - Laboratoire Structures, Propriétés et Modélisation des solides

Abstract : Chromium silicon CrSi alloys are foreseen as possible materials for spintronic devices. Ion beam mixing could be an efficient technique to produce thin films of such alloys at room temperature while avoiding thermal diffusion. In order to assess this point, we have irradiated 20 nm Cr layer on a (1 0 0) Si wafer with 70 keV Kr ions. The X-ray reflectometry technique combined with Transmission Electron Microscopy and Energy Dispersive X-ray analysis was applied to analyze, at the nanometric scale, the formation of Cr/Si blurred interfaces induced by ion beam mixing. From the analysis of reflectivity curves, it appears that nanometric Cr5Si3 and CrSi2 phases are produced at the early stage of the process. The existence of these two paramagnetic phases gives some clues to explain the reason why the experimentally observed ferrimagnetism was weaker than predicted.

Document type :

Journal articles

Domain :

Physics [physics] / Physics [physics] / Chemical Physics [physics.chem-ph]

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http://hal.in2p3.fr/in2p3-01117636
Contributor : Dominique Girod <>
Submitted on : Tuesday, February 17, 2015 - 2:56:02 PM
Last modification on : Friday, March 5, 2021 - 3:06:24 PM

Interdiffusion processes at irradiated Cr/Si interfaces

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Interdiffusion processes at irradiated Cr/Si interfaces

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