Low-temperature technique of thin silicon ion implanted epitaxial detectors

Abstract : A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a lowtemperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (Eα = 5.5MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr(E = 35AMeV)+112Sn. The ΔE−E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2AMeV depending on the ion charge.
Type de document :
Article dans une revue
European Physical Journal A, EDP Sciences, 2015, 51, pp.15. 〈10.1140/epja/i2015-15015-2〉
Liste complète des métadonnées

http://hal.in2p3.fr/in2p3-01120218
Contributeur : Michel Lion <>
Soumis le : mercredi 25 février 2015 - 10:06:09
Dernière modification le : jeudi 11 octobre 2018 - 11:28:04

Lien texte intégral

Identifiants

Citation

A.J. Kordyasz, N. Le Neindre, M. Pârlog, G. Casini, R. Bougault, et al.. Low-temperature technique of thin silicon ion implanted epitaxial detectors. European Physical Journal A, EDP Sciences, 2015, 51, pp.15. 〈10.1140/epja/i2015-15015-2〉. 〈in2p3-01120218〉

Partager

Métriques

Consultations de la notice

430