n-type 6H-SiC(0001) substrates were implanted with a fluence of Mn+ 5x 10(16) (maximum Mn content of 7%), with implantation energy of 80 keV and substrate temperature of 365 degrees C to promote recrystallization. The samples were characterized using Rutherford backscattering and channeling (RBS/C) spectroscopy and electron probe microanalysis in the energy dispersive X-ray (EPMA-EDX) technique; while the magnetization was studied using a superconducting quantum interference device techniques. In the as-implanted sample, three well-defined specific defect zones were identified as deduced from the analysis of RBS/C spectra. It is shown that the two main vacancy-related and interstitial-related defects undergo limited changes when annealing at 800 degrees C, while a major recovery is obtained after annealing at 1100 degrees C. Strain relaxation was also observed upon annealing as determined from HRXRD. Magnetization was strongly reduced with increasing annealing temperature from 800 degrees C to 1600 degrees C. This effect seems to be related to the dilution effect (reduction of Mn content) due to the local diffusion of Mn as suggested from the results obtained using both RBS/C and EPMA-EDX techniques.