Impact of low-dose electron irradiation on n+p silicon strip sensors

W. Adam G. Baulieu 1 G. Boudoul 1 C. Combaret 1 D. Contardo 1 G. Gallbit 1 N. Lumb 1 H. Mathez 1 L. Mirabito 1 S. Perries 1 D. Sabes 1 M. Vander Donckt 1 P. Verdier 1 S. Viret 1 Y. Zoccarato 1 J.-L. Agram 2 E. Conte 2 J.-Ch. Fontaine J. Andrea 2 D. Bloch 2 C. Bonnin 2 J.-M. Brom 2 E. Chabert 2 L. Charles 2 Ch. Goetzmann 2 L. Gross 2 J. Hosselet 2 C. Mathieu 2 M. Richer 2 K. Skovpen 2
1 IPNL - Institut de Physique Nucléaire de Lyon
2 IPHC - Institut Pluridisciplinaire Hubert Curien
Abstract : The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80{\deg}C and annealing times of 18 hours, showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO2 by the radiation from the {\ss} source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of p+n strip sensors is discussed.
Type de document :
Article dans une revue
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2015, 803, pp.100-112. 〈10.1016/j.nima.2015.08.026〉
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Soumis le : lundi 18 mai 2015 - 09:24:06
Dernière modification le : jeudi 7 février 2019 - 15:15:50

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W. Adam, G. Baulieu, G. Boudoul, C. Combaret, D. Contardo, et al.. Impact of low-dose electron irradiation on n+p silicon strip sensors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2015, 803, pp.100-112. 〈10.1016/j.nima.2015.08.026〉. 〈in2p3-01152506〉

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