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Journal articles
Impact of low-dose electron irradiation on n+p silicon strip sensors
W. Adam
G. Baulieu
1
G. Boudoul
1
C. Combaret
1
D. Contardo
1
G. Gallbit
1
N. Lumb
1
H. Mathez
1
L. Mirabito
1
S. Perries
1
D. Sabes
1
M. Vander Donckt
1
P. Verdier
1
S. Viret
1
Y. Zoccarato
1
J.-L. Agram
2
E. Conte
2
J.-Ch. Fontaine
J. Andrea
2
D. Bloch
2
C. Bonnin
2
J.-M. Brom
2
E. Chabert
2
L. Charles
2
Ch. Goetzmann
2
L. Gross
2
J. Hosselet
2
C. Mathieu
2
M. Richer
2
K. Skovpen
2
M. Richer 2
Author
K. Skovpen 2
Author
1
IPNL - Institut de Physique Nucléaire de Lyon (Campus LyonTech-la Doua
Bâtiment Paul DIRAC
4 Rue Enrico Fermi
69622 Villeurbanne Cedex - France)
- UCBL - Université Claude Bernard Lyon 1 (43, boulevard du 11 novembre 1918, 69622 Villeurbanne cedex - France)
- Université de Lyon (92 rue Pasteur - CS 30122, 69361 Lyon Cedex 07 - France)
- IN2P3 - Institut National de Physique Nucléaire et de Physique des Particules du CNRS (France)
- CNRS - Centre National de la Recherche Scientifique : UMR5822 (France)
2
IPHC - Institut Pluridisciplinaire Hubert Curien (23 rue Loess - BP 28 67037 Strasbourg Cedex - France)
- IN2P3 - Institut National de Physique Nucléaire et de Physique des Particules du CNRS (France)
- UNISTRA - Université de Strasbourg (4 rue Blaise Pascal - CS 90032 - 67081 Strasbourg cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR7178 (France)
Abstract : The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80{\deg}C and annealing times of 18 hours, showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO2 by the radiation from the {\ss} source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of p+n strip sensors is discussed.
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Journal articles
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http://hal.in2p3.fr/in2p3-01152506
Contributor : Sylvie Flores <>
Submitted on : Monday, May 18, 2015 - 9:24:06 AM
Last modification on : Thursday, June 17, 2021 - 3:19:04 PM
Contributor : Sylvie Flores <>
Submitted on : Monday, May 18, 2015 - 9:24:06 AM
Last modification on : Thursday, June 17, 2021 - 3:19:04 PM
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- HAL Id : in2p3-01152506, version 1
- DOI : 10.1016/j.nima.2015.08.026
- ARXIV : 1505.02672
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IN2P3 | CNRS | DRS-IPHC | IPHC | UNIV-LYON1 | SITE-ALSACE | IP2I | UDL
Citation
W. Adam, G. Baulieu, G. Boudoul, C. Combaret, D. Contardo, et al.. Impact of low-dose electron irradiation on n+p silicon strip sensors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2015, 803, pp.100-112. ⟨10.1016/j.nima.2015.08.026⟩. ⟨in2p3-01152506⟩
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