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Impact of low-dose electron irradiation on n+p silicon strip sensors

Abstract : The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80{\deg}C and annealing times of 18 hours, showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxide-charge density due to the ionization of the SiO2 by the radiation from the {\ss} source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of p+n strip sensors is discussed.
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Submitted on : Monday, May 18, 2015 - 9:24:06 AM
Last modification on : Thursday, December 10, 2020 - 6:36:04 PM

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W. Adam, G. Baulieu, G. Boudoul, C. Combaret, D. Contardo, et al.. Impact of low-dose electron irradiation on n+p silicon strip sensors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2015, 803, pp.100-112. ⟨10.1016/j.nima.2015.08.026⟩. ⟨in2p3-01152506⟩



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