Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

Abstract : AlN, GaN, and InN were irradiated at room temperature with monatomic swift heavy ions and high-energy fullerenes. Ion track formation was studied using transmission electron microscopy in both plane view and cross-sectional modes. A full experimental description of ion track formation in these compounds is presented. AlN shows a remarkable resistance towards track formation; InN is the most sensitive and shows partial decomposition, likely into N-2 and metallic clusters; the overlapping of the amorphous tracks in GaN does not give an amorphous layer because of a track-induced recrystallization. We discuss the application of the inelastic thermal spike model, which allows good and simple predictions of track radii in oxides, to the studied III-nitrides, and in general to semiconductors.
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Article dans une revue
Journal of Materials Science, Springer Verlag, 2015, 50 (issue 15), pp.5214-5227. 〈10.1007/s10853-015-9069-y〉
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Contributeur : Emilie Bonnardel <>
Soumis le : vendredi 26 juin 2015 - 11:12:10
Dernière modification le : jeudi 1 février 2018 - 01:40:10

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M. Sall, I. Monnet, F. Moisy, C. Grygiel, S. Jublot-Leclerc, et al.. Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model. Journal of Materials Science, Springer Verlag, 2015, 50 (issue 15), pp.5214-5227. 〈10.1007/s10853-015-9069-y〉. 〈in2p3-01168587〉

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