Study of irradiated NinN production and LGAD dopping profiles

Abstract : Through SiMS measurements, the evolution of the doping profile is been studied for irradiated NinN samples at fluences of 10e15neq/cm2, while the transient current technique is used on diodes of the same implantation profile n order to evaluate the electrical characteristics evolution as a function of the received dose. Comparison and conclusions are established with the non-irradiated case both for the profile evolution and the intrinsic characteristics of the samples. A SiMS vs process simulation approach is used to model and control the new LGAD production in an attempt to understand post irradiation behavior and electrical characteristic.
Type de document :
Communication dans un congrès
26th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Jun 2015, Santander, Spain
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http://hal.in2p3.fr/in2p3-01171473
Contributeur : Sabine Starita <>
Soumis le : vendredi 3 juillet 2015 - 17:09:57
Dernière modification le : jeudi 11 janvier 2018 - 06:14:21

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  • HAL Id : in2p3-01171473, version 1

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E. Gkougkousis, A. Lounis, C. Nellist. Study of irradiated NinN production and LGAD dopping profiles. 26th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Jun 2015, Santander, Spain. 〈in2p3-01171473〉

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