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Study of irradiated NinN production and LGAD dopping profiles

Abstract : Through SiMS measurements, the evolution of the doping profile is been studied for irradiated NinN samples at fluences of 10e15neq/cm2, while the transient current technique is used on diodes of the same implantation profile n order to evaluate the electrical characteristics evolution as a function of the received dose. Comparison and conclusions are established with the non-irradiated case both for the profile evolution and the intrinsic characteristics of the samples. A SiMS vs process simulation approach is used to model and control the new LGAD production in an attempt to understand post irradiation behavior and electrical characteristic.
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Submitted on : Friday, July 3, 2015 - 5:09:57 PM
Last modification on : Wednesday, September 16, 2020 - 4:28:40 PM


  • HAL Id : in2p3-01171473, version 1




E. Gkougkousis, A. Lounis, C. Nellist. Study of irradiated NinN production and LGAD dopping profiles. 26th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, Jun 2015, Santander, Spain. ⟨in2p3-01171473⟩



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