Neutron-induced single events in a cots soft-errir free SRAM at low bias voltage

Abstract : This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.
Type de document :
Poster
Conference on Radiation Effects on Components and Systems (RADECS 2015), Sep 2015, Moscow, Russia. IEEE, Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015), pp.1-4, 2015, 〈http://www.radecs2015.org/〉. 〈10.1109/RADECS.2015.7365640〉
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http://hal.in2p3.fr/in2p3-01199457
Contributeur : Emmanuelle Vernay <>
Soumis le : mardi 15 septembre 2015 - 14:26:26
Dernière modification le : jeudi 11 janvier 2018 - 06:15:44

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J.A. Clemente, F.J. Franco, F. Villa, M. Baylac, P. Ramos, et al.. Neutron-induced single events in a cots soft-errir free SRAM at low bias voltage. Conference on Radiation Effects on Components and Systems (RADECS 2015), Sep 2015, Moscow, Russia. IEEE, Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015), pp.1-4, 2015, 〈http://www.radecs2015.org/〉. 〈10.1109/RADECS.2015.7365640〉. 〈in2p3-01199457〉

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