Neutron-induced single events in a cots soft-errir free SRAM at low bias voltage

This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only visible at low voltage, appearing along with single event upsets. The physical mechanisms are briefly discussed.

Domaines

Physique des accélérateurs [physics.acc-ph] Micro et nanotechnologies/Microélectronique

Emmanuelle Vernay : Connectez-vous pour contacter le contributeur

https://hal.in2p3.fr/in2p3-01199457

Soumis le : mardi 15 septembre 2015-14:26:26

Dernière modification le : jeudi 11 avril 2024-13:18:11

Dates et versions

in2p3-01199457 , version 1 (15-09-2015)

Identifiants

HAL Id : in2p3-01199457 , version 1
DOI : 10.1109/RADECS.2015.7365640

Citer

J.A. Clemente, F.J. Franco, Francesca Villa, Maud Baylac, Pablo Francisco Ramos Vargas, et al.. Neutron-induced single events in a cots soft-errir free SRAM at low bias voltage. Conference on Radiation Effects on Components and Systems (RADECS 2015), Sep 2015, Moscow, Russia. IEEE, Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015), pp.1-4, 2015, ⟨10.1109/RADECS.2015.7365640⟩. ⟨in2p3-01199457⟩

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