Statistical anomalies of bitflips in SRAMS to discriminate MCUS SEUS

J.A. Clemente 1 F.J. Franco 1 F. Villa 2 M. Baylac 2 S. Rey 2 H. Mecha 1 J.A. Agapito 1 Helmut Puchner 3 G. Hubert 4 R. Velazco 5
1 UCM - Universidad Complutense de Madrid [Madrid]
2 LPSC - Laboratoire de Physique Subatomique et de Cosmologie
3 Cypress Semiconductor
4 ONERA - The French Aerospace Lab [Toulouse]
5 TIMA - Techniques of Informatics and Microelectronics for integrated systems Architecture
Abstract : This paper presentes an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.
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Poster communications
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http://hal.in2p3.fr/in2p3-01199459
Contributor : Emmanuelle Vernay <>
Submitted on : Tuesday, September 15, 2015 - 2:29:12 PM
Last modification on : Monday, July 1, 2019 - 10:28:06 AM

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J.A. Clemente, F.J. Franco, F. Villa, M. Baylac, S. Rey, et al.. Statistical anomalies of bitflips in SRAMS to discriminate MCUS SEUS. Conference on Radiation Effects on Components and Systems (RADECS 2015), Sep 2015, Moscow, Russia. IEEE, Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2015), pp.1-4, 2015, ⟨10.1109/RADECS.2015.7365670⟩. ⟨in2p3-01199459⟩

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