Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array

Abstract : We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (mKID) arrays. Using a 6 inch sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 inch wafer was reduced to <25 %. Measurements of a 132-pixel mKID array from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminium mKIDs. We measured a noise equivalent power of NEP = 3.6e-15 Hz/Hz^(1/2). Finally, we describe possible routes to further improve the performance of these TiN mKID arrays.
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Poster
16th International Workshop on Low Temperature Detectors (LTD), Jul 2015, Grenoble, France. Journal of Low Temperature Physics, 184 (3), pp.654-660, 2016, 〈10.1007/s10909-016-1489-9〉
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http://hal.in2p3.fr/in2p3-01213949
Contributeur : Emmanuelle Vernay <>
Soumis le : vendredi 9 octobre 2015 - 14:37:10
Dernière modification le : mardi 22 mai 2018 - 21:48:10

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G. Coiffard, K-F. Schuster, E. F. C. Driessen, S. Pignard, M. Calvo, et al.. Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array. 16th International Workshop on Low Temperature Detectors (LTD), Jul 2015, Grenoble, France. Journal of Low Temperature Physics, 184 (3), pp.654-660, 2016, 〈10.1007/s10909-016-1489-9〉. 〈in2p3-01213949〉

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