Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array

Abstract : We describe the fabrication of homogeneous sub-stoichiometric titanium nitride films for microwave kinetic inductance detector (mKID) arrays. Using a 6 inch sputtering target and a homogeneous nitrogen inlet, the variation of the critical temperature over a 2 inch wafer was reduced to <25 %. Measurements of a 132-pixel mKID array from these films reveal a sensitivity of 16 kHz/pW in the 100 GHz band, comparable to the best aluminium mKIDs. We measured a noise equivalent power of NEP = 3.6e-15 Hz/Hz^(1/2). Finally, we describe possible routes to further improve the performance of these TiN mKID arrays.
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Journal of Low Temperature Physics, Springer Verlag (Germany), 2016, 184 (3-4), pp.654-660. 〈10.1007/s10909-016-1489-9〉
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Contributeur : Emmanuelle Vernay <>
Soumis le : vendredi 9 octobre 2015 - 14:37:10
Dernière modification le : mercredi 13 février 2019 - 10:06:06

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G. Coiffard, K-F. Schuster, E. F. C. Driessen, S. Pignard, M. Calvo, et al.. Uniform non-stoichiometric titanium nitride thin films for improved kinetic inductance detector array. Journal of Low Temperature Physics, Springer Verlag (Germany), 2016, 184 (3-4), pp.654-660. 〈10.1007/s10909-016-1489-9〉. 〈in2p3-01213949〉

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