Breakdown Voltage and Triggering Probability of SiPM from IV Curves

Abstract : This work presents a model describing the IV characteristics of SiPM detectors allowing to determine important physics parameters like breakdown voltage VBD and triggering probability PGeiger. The proposed model provides a good description of experimental data taken with SiPMs of different technologies (i.e. Hamamatsu HPK, KETEK) and geometries. Over a very wide range of current (i.e. 10-11A up to 10-4 A) only a few nA of difference were observed between the experimental and calculated values. Silvaco TCAD simulation tool was used to acquire further insights into the physics behind the IV curves and to identify the different components of DC current (i.e. thermal generated carriers, tunneling, afterpulses). The results are shown to be in good agreement with VBD and PGeiger determined from AC measurement.
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http://hal.in2p3.fr/in2p3-01226316
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Submitted on : Monday, November 9, 2015 - 11:54:28 AM
Last modification on : Thursday, January 11, 2018 - 6:14:22 AM

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  • HAL Id : in2p3-01226316, version 1

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A. Nagai, N. Dinu, A. Para. Breakdown Voltage and Triggering Probability of SiPM from IV Curves. 2015 IEEE Nuclear Science Symposium and Medical Imaging Conference - 22nd Symposium on Room-Temperature Semiconductor X-Ray and Gamma-Ray Detectors, Oct 2015, San Diego, CA, United States. ⟨in2p3-01226316⟩

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