LGAD and irradiated doping profiles

Abstract : In the context of the latest CNM LGAD production run, SiMS measurements and simulations are presented for the and nntypr implants. An additional study on irradiated p-implanted doping profiles is performed with fuences of 10^15neq/cm^2
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http://hal.in2p3.fr/in2p3-01252381
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Submitted on : Thursday, January 7, 2016 - 3:04:03 PM
Last modification on : Thursday, January 11, 2018 - 6:14:22 AM

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  • HAL Id : in2p3-01252381, version 1

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V. Gkougkousis, A. Lounis, C. Nellist. LGAD and irradiated doping profiles . 27th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders , Dec 2015, Meyrin, Switzerland. ⟨in2p3-01252381⟩

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