Abstract : In the context of the latest CNM LGAD production run, SiMS measurements and simulations are presented for the and nntypr implants. An additional study on irradiated p-implanted doping profiles is performed with fuences of 10^15neq/cm^2
V. Gkougkousis, A. Lounis, C. Nellist. LGAD and irradiated doping profiles . 27th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders , Dec 2015, Meyrin, Switzerland. ⟨in2p3-01252381⟩