LGAD and irradiated doping profiles

Abstract : In the context of the latest CNM LGAD production run, SiMS measurements and simulations are presented for the and nntypr implants. An additional study on irradiated p-implanted doping profiles is performed with fuences of 10^15neq/cm^2
Type de document :
Communication dans un congrès
27th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders , Dec 2015, Meyrin, Switzerland
Liste complète des métadonnées

http://hal.in2p3.fr/in2p3-01252381
Contributeur : Sabine Starita <>
Soumis le : jeudi 7 janvier 2016 - 15:04:03
Dernière modification le : jeudi 11 janvier 2018 - 06:14:22

Identifiants

  • HAL Id : in2p3-01252381, version 1

Collections

Citation

V. Gkougkousis, A. Lounis, C. Nellist. LGAD and irradiated doping profiles . 27th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders , Dec 2015, Meyrin, Switzerland. 〈in2p3-01252381〉

Partager

Métriques

Consultations de la notice

41