CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments

Abstract : A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150 nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166 μm and 80 μm. We report the results obtained with the prototype fabricated in this technology.
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2016, 831, pp.94-98. 〈http://www.sciencedirect.com/science/article/pii/S0168900216001297〉. 〈10.1016/j.nima.2016.01.088〉
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Contributeur : Danielle Cristofol <>
Soumis le : jeudi 28 avril 2016 - 13:35:14
Dernière modification le : mardi 27 mars 2018 - 16:00:31

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Toko Hirono, Marlon Barbero, Patrick Breugnon, Stephanie Godiot, Laura Gonella, et al.. CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2016, 831, pp.94-98. 〈http://www.sciencedirect.com/science/article/pii/S0168900216001297〉. 〈10.1016/j.nima.2016.01.088〉. 〈in2p3-01308741〉

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