Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade

P. Rymaszewski M. Barbero 1 P. Breugnon 1 S. Godiot 1 L. Gonella T. Hemperek T. Hirono F. Hügging J. Liu 1 P. Pangaud 1 I. Peric A. Rozanov 1 A. Wang N. Wermes
1 CPPM - Centre de Physique des Particules de Marseille
Abstract : The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.
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Conference papers
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Submitted on : Thursday, April 28, 2016 - 1:54:41 PM
Last modification on : Thursday, January 18, 2018 - 1:55:53 AM

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P. Rymaszewski, M. Barbero, P. Breugnon, S. Godiot, L. Gonella, et al.. Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade. Topical Workshop on Electronics for Particle Physics (TWEPP14), Sep 2014, Aix en Provence, France. pp.C02045, ⟨10.1088/1748-0221/11/02/C02045⟩. ⟨in2p3-01308749⟩

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