CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments

Abstract : A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150. nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166. μm and 80. μm. We report the results obtained with the prototype fabricated in this technology.
Type de document :
Communication dans un congrès
10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Sep 2015, Xi'an, China. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, à venir
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http://hal.in2p3.fr/in2p3-01308860
Contributeur : Danielle Cristofol <>
Soumis le : jeudi 28 avril 2016 - 15:18:49
Dernière modification le : jeudi 18 janvier 2018 - 01:55:10

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  • HAL Id : in2p3-01308860, version 1

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T. Hirono, M. Barbero, P. Breugnon, S. Godiot, T. Hemperek, et al.. CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments. 10th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Sep 2015, Xi'an, China. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, à venir. 〈in2p3-01308860〉

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