Skip to Main content Skip to Navigation
Journal articles

Effect of the Radial Ionization Profile of Proton on SEU Sensitivity of Nanoscale SRAMs

Abstract : This paper investigates the impact of the radial ionization profile of proton on SEU sensitivity for nanoscale devices. Intrinsic radial track structures of energy deposition of protons (from 0.5 to 2 MeV) in a silicon box with 2 μm of Si over-layer and a 100-nm silicon film were investigated. The orders of magnitude of the radial deposition is around 200 to 300 nm. Approaches based on punctual or average depositions induce a drift increasing for nanoscale volumes. Realistic energy deposition databases were developed thanks to GEANT4 and coupled with MUSCA SEP3 to perform SEU cross sections and SER estimations. Calculations applied to SOI and bulk technologies (65 and 45-nm) were conducted and compared with experimental results. Calculations are consistent with experiments, despite some drifts. Analyses demonstrate the necessity to consider the 3D morphology description in SEE modeling for nanoscale technologies, more particularly for SOI technologies.
Complete list of metadata
Contributor : Danielle Cristofol Connect in order to contact the contributor
Submitted on : Wednesday, July 20, 2016 - 2:39:54 PM
Last modification on : Tuesday, October 19, 2021 - 10:50:58 PM




G. Hubert, P. Li Cavoli, C. Federico, L. Artola, J. Busto. Effect of the Radial Ionization Profile of Proton on SEU Sensitivity of Nanoscale SRAMs. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2015, 62, pp.2837-2845. ⟨10.1109/TNS.2015.2496238⟩. ⟨in2p3-01347158⟩



Les métriques sont temporairement indisponibles