Intrinsic defects and structural phase of ZnS nanocrystalline thin films: effects of substrate temperature

S. P. Patel J. C. Pivin 1 R. Chandra D. Kanjilal L. Kumar
1 CSNSM PCI
CSNSM - Centre de Sciences Nucléaires et de Sciences de la Matière
Abstract : Fabrications of ZnS nanocrystalline thin films at different substrate temperatures (T-S) of 200, 300 and 400 degrees C by means of pulsed laser deposition are presented. Thin film deposited at TS of 200 degrees C is in cubic zinc-blende (ZB) structure while those deposited at TS of 300 and 400 degrees C are in hexagonal wurtzite (W) phase. The grain size, surface roughness and bandgap of the films increases with increasing TS. The zinc vacancies and interstitials in the films increases while sulfur vacancies decreases with increasing TS. The variation of zinc and sulfur vacancies in ZnS films with TS is responsible for structural phase transition from ZB to W which causes the change in energy bandgap.
Keywords : PULSED-LASER DEPOSITION OPTICAL-PROPERTIES SYNTHESIZED ZNS SOLAR-CELLS GROWTH PHOTOLUMINESCENCE TRANSFORMATION NANOPARTICLES IRRADIATION TRANSITION
Type de document :
Article dans une revue
Journal of Materials Science: Materials in Electronics, Springer Verlag, 2016, 27 (6), pp.5640-5645. 〈10.1007/s10854-016-4472-y〉
Liste complète des métadonnées
http://hal.in2p3.fr/in2p3-01348189
Contributeur : Emilie Bonnardel <>
Soumis le : vendredi 22 juillet 2016 - 15:26:31
Dernière modification le : jeudi 11 janvier 2018 - 06:27:10

Identifiants

Collections

IN2P3 | CSNSM | UNIV-PARIS-SACLAY

Citation

S. P. Patel, J. C. Pivin, R. Chandra, D. Kanjilal, L. Kumar. Intrinsic defects and structural phase of ZnS nanocrystalline thin films: effects of substrate temperature. Journal of Materials Science: Materials in Electronics, Springer Verlag, 2016, 27 (6), pp.5640-5645. 〈10.1007/s10854-016-4472-y〉. 〈in2p3-01348189〉

Exporter

BibTeX TEI DC DCterms EndNote

Partager

Métriques

Consultations de la notice

32

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD