INTERNAL FRICTION AND YOUNG'S MODULUS MEASUREMENTS ON SiO2 AND Ta2O5 FILMS DONE WITH AN ULTRA-HIGH Q SILICON-WAFER SUSPENSION

Résumé : In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension) has been developed. The key features of this system are: i) the possibility to use substrates easily available like silicon wafers; ii) extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2×10^8 on 3 " diameter wafers; iii) reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv) absence of clamping; v) the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO 2 and at room temperature only on Ta2O5 films deposited on silicon are presented.
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M Granata, L Balzarini, J Degallaix, V Dolique, R Flaminio, et al.. INTERNAL FRICTION AND YOUNG'S MODULUS MEASUREMENTS ON SiO2 AND Ta2O5 FILMS DONE WITH AN ULTRA-HIGH Q SILICON-WAFER SUSPENSION . Archives of Metallurgy and Materials, Versita, 2015, ⟨10.1515/amm-2015-0060⟩. ⟨in2p3-01357312⟩

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