Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs From MCUs

Abstract : Recently, the occurrence of multiple events in static tests has been investigated by checking the statistical distribution of the difference between the addresses of the words containing bitflips. That method has been successfully applied to Field Programmable Gate Arrays (FPGAs) and the original authors indicate that it is also valid for SRAMs. This paper presents a modified methodology that is based on checking the XORed addresses with bitflips, rather than on the difference. Irradiation tests on CMOS 130 & 90 nm SRAMs with 14-MeV neutrons have been performed to validate this methodology. Results in high-altitude environments are also presented and cross-checked with theoretical predictions. In addition, this methodology has also been used to detect modifications in the organization of said memories. Theoretical predictions have been validated with actual data provided by the manufacturer.
Type de document :
Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, 63 (4), pp.2087 - 2094. 〈10.1109/TNS.2016.2551263〉
Liste complète des métadonnées

http://hal.in2p3.fr/in2p3-01391222
Contributeur : Emmanuelle Vernay <>
Soumis le : jeudi 3 novembre 2016 - 09:12:23
Dernière modification le : jeudi 11 janvier 2018 - 06:15:44

Identifiants

Collections

Citation

J.A. Clemente, F.J. Franco, F. Villa, M. Baylac, S. Rey, et al.. Statistical Anomalies of Bitflips in SRAMs to Discriminate SBUs From MCUs. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2016, 63 (4), pp.2087 - 2094. 〈10.1109/TNS.2016.2551263〉. 〈in2p3-01391222〉

Partager

Métriques

Consultations de la notice

131