Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment

T. Hirono M. Barbero 1 P. Breugnon 1 S. Godiot 1 T. Hemperek F. Hügging J. Janssen H. Krüger Jian Liu P. Pangaud 1 I. Perić D.-L. Pohl A. Rozanov 1 P. Rymaszewski N. Wermes
1 CPPM - Centre de Physique des Particules de Marseille
Abstract : Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS was fabricated in a 150nm CMOS process on a substrate with a resistivity of >2 k{\Omega}cm that was thinned to 100 {\mu}m. Full depletion occurs around 20V, which is far below the breakdown voltage of 110 V. A readout chip has been attached for fast triggered readout. Presented prototype also uses a concept of sub-pixel en/decoding three pixels of the prototype chip are readout by one pixel of the readout chip. Since radiation tolerance is one of the largest concerns in DMAPS, the CCPD_LF chip has been irradiated with X-rays and neutrons up to a total ionization dose of 50 Mrad and a fluence of 10E15neq/cm2, respectively.
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Conference papers
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http://hal.in2p3.fr/in2p3-01416164
Contributor : Danielle Cristofol <>
Submitted on : Wednesday, December 14, 2016 - 10:12:32 AM
Last modification on : Thursday, January 18, 2018 - 2:21:49 AM

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  • HAL Id : in2p3-01416164, version 1
  • ARXIV : 1612.03154

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T. Hirono, M. Barbero, P. Breugnon, S. Godiot, T. Hemperek, et al.. Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment. 2016 IEEE NSS conference, Oct 2016, Strasbourg, France. ⟨in2p3-01416164⟩

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