Reactive gas pulsing sputtering process, a promising technique to elaborate silicon oxynitride multilayer nanometric antireflective coatings

F Farhaoui; A. Bousquet; R Smaali; A. Moreau; E Centeno; C Cellier; C. Bernard; R Rapegno; F Réveret; E Tomasella

doi:10.1088/1361-6463/50/1/015306

Journal articles

Reactive gas pulsing sputtering process, a promising technique to elaborate silicon oxynitride multilayer nanometric antireflective coatings

F Farhaoui ¹ A. Bousquet ¹ R Smaali ² A. Moreau ² E Centeno ² C Cellier ¹ C. Bernard ³ R Rapegno ³ F Réveret ² E Tomasella ¹

1 ICCF - Institut de Chimie de Clermont-Ferrand

2 IP - Institut Pascal

3 IPNL - Institut de Physique Nucléaire de Lyon

Document type :

Journal articles

Domain :

Physics [physics] / Physics [physics] / Chemical Physics [physics.chem-ph]

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http://hal.in2p3.fr/in2p3-01430655
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Submitted on : Tuesday, January 10, 2017 - 10:29:08 AM
Last modification on : Friday, November 27, 2020 - 9:52:02 AM

Reactive gas pulsing sputtering process, a promising technique to elaborate silicon oxynitride multilayer nanometric antireflective coatings

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Reactive gas pulsing sputtering process, a promising technique to elaborate silicon oxynitride multilayer nanometric antireflective coatings

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