Reactive gas pulsing sputtering process, a promising technique to elaborate silicon oxynitride multilayer nanometric antireflective coatings

F Farhaoui 1 A. Bousquet 1 R Smaali 2 A. Moreau 2 E Centeno 2 C Cellier 1 C. Bernard 3 R Rapegno 3 F Réveret 2 E Tomasella 1
1 ICCF - Institut de Chimie de Clermont-Ferrand
2 IP - Institut Pascal
3 IPNL - Institut de Physique Nucléaire de Lyon
Document type :
Journal articles
Complete list of metadatas
http://hal.in2p3.fr/in2p3-01430655
Contributor : Dominique Girod <>
Submitted on : Tuesday, January 10, 2017 - 10:29:08 AM
Last modification on : Tuesday, November 19, 2019 - 2:37:57 AM

Identifiers

Collections

IN2P3 | IPNL | CNRS | INSTITUT_PASCAL | INC-CNRS | ICC | PRES_CLERMONT | SIGMA-CLERMONT | UNIV-LYON1 | IP2I | UDL

Citation

F Farhaoui, A. Bousquet, R Smaali, A. Moreau, E Centeno, et al.. Reactive gas pulsing sputtering process, a promising technique to elaborate silicon oxynitride multilayer nanometric antireflective coatings. Journal of Physics D: Applied Physics, IOP Publishing, 2017, 50 (1), pp.015306. ⟨10.1088/1361-6463/50/1/015306⟩. ⟨in2p3-01430655⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

180

Contact

Informations

CCSD