Distributed microwave plasma sources: coupling modes and operation at high pressure for large area deposition

Abstract : The 2D and 3D distribution of a set of elementary plasma sources enables its use in large area deposition and etching processes. Existing sources, working at 2.45 GHz, provide uniform plasma conditions at low and very low pressures (up to a few Torr). A new challenge is to extend the uniformity of the plasma at higher pressures, where the diffusion is limited by the scaling laws. We will describe the transition between inductive and capacitive coupling modes as a function of frequency (2.45 GHz, 915 MHZ and 352 MHz), gas pressure, source geometry and input power. The understanding of the transition should allow the efficient design of new sources operating at high gas pressure. Interest in this technology will be pointed out through some examples of applications.
Document type :
Poster communications
Complete list of metadatas

http://hal.in2p3.fr/in2p3-01572036
Contributor : Emmanuelle Vernay <>
Submitted on : Friday, August 4, 2017 - 2:03:40 PM
Last modification on : Tuesday, May 22, 2018 - 9:48:11 PM

Identifiers

  • HAL Id : in2p3-01572036, version 1

Collections

IN2P3 | LPSC | UGA

Citation

A. Martín Ortega, A. Bès, S. Béchu, A. Lacoste. Distributed microwave plasma sources: coupling modes and operation at high pressure for large area deposition . XXXIII International Conference on Phenomena in Ionized Gases (ICPIG 2017), Jul 2017, Estoril, Portugal. Proceedings of the XXXIII International Conference on Phenomena in Ionized Gases pp.314, 2017. ⟨in2p3-01572036⟩

Share

Metrics

Record views

155