SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage

J.A. Clemente 1 J.A. Fraire 2 M. Solinas 3 F.J. Franco 4 F. Villa 5 S. Rey 5 M. Baylac 5 Helmut Puchner 6 H. Mecha 4 R. Velazco 3
1 UCM - Universidad Complutense de Madrid [Madrid]
2 BIOTIS - Bioingénierie tissulaire
3 TIMA - Techniques of Informatics and Microelectronics for integrated systems Architecture
4 UCM - Complutense University of Madrid
5 LPSC - Laboratoire de Physique Subatomique et de Cosmologie
6 Cypress Semiconductor
Abstract : Radiation tests with 14.2 MeV neutrons were performed at ultra low bias voltages on COTS SRAMs manufactured on 130nm, 90nm and 65nm CMOS processes. Experimental results with power supplies in 0.5V-3.17V are presented and discussed
Document type :
Poster communications
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http://hal.in2p3.fr/in2p3-01735635
Contributor : Emmanuelle Vernay <>
Submitted on : Friday, March 16, 2018 - 11:04:07 AM
Last modification on : Monday, July 1, 2019 - 10:28:06 AM

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  • HAL Id : in2p3-01735635, version 1

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J.A. Clemente, J.A. Fraire, M. Solinas, F.J. Franco, F. Villa, et al.. SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage . Conference on Radiation Effects on Components and Systems (RADECS 2017), Oct 2017, Geneva, Switzerland. 2017. ⟨in2p3-01735635⟩

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