SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage

J.A. Clemente; J.A. Fraire; M. Solinas; F.J. Franco; F. Villa; S. Rey; M. Baylac; Helmut Puchner; H. Mecha; R. Velazco

SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage

J.A. Clemente ¹ J.A. Fraire ² M. Solinas ³ F.J. Franco ⁴ F. Villa ⁵ S. Rey ⁵ M. Baylac ⁵ Helmut Puchner ⁶ H. Mecha ⁴ R. Velazco ³

1 UCM - Universidad Complutense de Madrid [Madrid]

2 BIOTIS - Bioingénierie tissulaire

3 TIMA - Techniques of Informatics and Microelectronics for integrated systems Architecture

4 UCM - Complutense University of Madrid

5 LPSC - Laboratoire de Physique Subatomique et de Cosmologie

6 Cypress Semiconductor

Abstract : Radiation tests with 14.2 MeV neutrons were performed at ultra low bias voltages on COTS SRAMs manufactured on 130nm, 90nm and 65nm CMOS processes. Experimental results with power supplies in 0.5V-3.17V are presented and discussed

Document type :

Poster communications

Domain :

Engineering Sciences [physics] / Electronics

Complete list of metadatas

http://hal.in2p3.fr/in2p3-01735635
Contributor : Emmanuelle Vernay <>
Submitted on : Friday, March 16, 2018 - 11:04:07 AM
Last modification on : Monday, July 1, 2019 - 10:28:06 AM

SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage

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SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage

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