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Poster communications
SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage
J.A. Clemente
1
J.A. Fraire
2
M. Solinas
3
F.J. Franco
4
F. Villa
5
S. Rey
5
M. Baylac
5
Helmut Puchner
6
H. Mecha
4
Raoul Velazco
3
H. Mecha 4
Author
Raoul Velazco 3
Author IdHAL : raoul-velazco
1
UCM - Universidad Complutense de Madrid [Madrid] (Avda. de Séneca, 2, Ciudad Universitaria, 28040 Madrid - Spain)
2
BIOTIS - Bioingénierie tissulaire (146, rue Léo Saignat 33076 Bordeaux cedex - France)
- Université Bordeaux Segalen - Bordeaux 2 (146 rue Léo Saignat - 33076 Bordeaux cedex - France)
- INSERM - Institut National de la Santé et de la Recherche Médicale : U1026 (101, rue de Tolbiac, 75013 Paris - France)
3
TIMA - Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (46 avenue Félix Viallet 38031 GRENOBLE Cedex 1 - France)
- Grenoble INP - Institut polytechnique de Grenoble - Grenoble Institute of Technology (46 avenue Félix Viallet 38031 Grenoble Cedex 1 - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5159 (France)
- UGA [2016-2019] - Université Grenoble Alpes [2016-2019] (38058 Grenoble cedex - France)
4
UCM - Complutense University of Madrid (Avda. de Séneca, 2, Ciudad Universitaria, 28040 Madrid - Spain)
5
LPSC - Laboratoire de Physique Subatomique et de Cosmologie (53 avenue des Martyrs - 38026 Grenoble Cedex - France)
- Grenoble INP - Institut polytechnique de Grenoble - Grenoble Institute of Technology (46 avenue Félix Viallet 38031 Grenoble Cedex 1 - France)
- IN2P3 - Institut National de Physique Nucléaire et de Physique des Particules du CNRS (France)
- CNRS - Centre National de la Recherche Scientifique : UMR5821 (France)
- UGA [2016-2019] - Université Grenoble Alpes [2016-2019] (38058 Grenoble cedex - France)
6
Cypress Semiconductor [San Jose] (Cypress Semiconductor Corp., 198 Champion Court - San Jose, CA 95134 - United States)
Abstract : Radiation tests with 14.2 MeV neutrons were performed at ultra low bias voltages on COTS
SRAMs manufactured on 130nm, 90nm and 65nm CMOS processes. Experimental results
with power supplies in 0.5V-3.17V are presented and discussed
Document type :
Poster communications
Domain :
Complete list of metadata
http://hal.in2p3.fr/in2p3-01735635
Contributor : Emmanuelle Vernay <>
Submitted on : Friday, March 16, 2018 - 11:04:07 AM
Last modification on : Tuesday, May 11, 2021 - 11:37:52 AM
Contributor : Emmanuelle Vernay <>
Submitted on : Friday, March 16, 2018 - 11:04:07 AM
Last modification on : Tuesday, May 11, 2021 - 11:37:52 AM
Identifiers
- HAL Id : in2p3-01735635, version 1
Citation
J.A. Clemente, J.A. Fraire, M. Solinas, F.J. Franco, F. Villa, et al.. SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage . Conference on Radiation Effects on Components and Systems (RADECS 2017), Oct 2017, Geneva, Switzerland. 2017. ⟨in2p3-01735635⟩
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