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Poster communications

SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage

J.A. Clemente 1 J.A. Fraire 2 M. Solinas 3 F.J. Franco 4 F. Villa 5 S. Rey 5 M. Baylac 5 Helmut Puchner 6 H. Mecha 4 Raoul Velazco 3
1 UCM - Universidad Complutense de Madrid [Madrid]
2 BIOTIS - Bioingénierie tissulaire
3 TIMA - Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés
4 UCM - Complutense University of Madrid
5 LPSC - Laboratoire de Physique Subatomique et de Cosmologie
6 Cypress Semiconductor [San Jose]
Abstract : Radiation tests with 14.2 MeV neutrons were performed at ultra low bias voltages on COTS SRAMs manufactured on 130nm, 90nm and 65nm CMOS processes. Experimental results with power supplies in 0.5V-3.17V are presented and discussed
Document type :
Poster communications
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http://hal.in2p3.fr/in2p3-01735635
Contributor : Emmanuelle Vernay <>
Submitted on : Friday, March 16, 2018 - 11:04:07 AM
Last modification on : Tuesday, January 26, 2021 - 9:08:05 AM

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  • HAL Id : in2p3-01735635, version 1

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IN2P3 | CNRS | TIMA | LPSC | LPSC-ACC | BIOTIS | UGA

Citation

J.A. Clemente, J.A. Fraire, M. Solinas, F.J. Franco, F. Villa, et al.. SEU sensitivity trends of three successive generations of COTS SRAMs at ultra low bias voltage . Conference on Radiation Effects on Components and Systems (RADECS 2017), Oct 2017, Geneva, Switzerland. 2017. ⟨in2p3-01735635⟩

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