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Publications du CENBG |  |
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Publications du CENBG | |
| HAL: in2p3-00739573, version 1 |
| DOI: 10.1080/09500839.2012.713133 |
| Detailed view |  Export this paper |
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| Philosophical Magazine Letters 92 (2012) 633-639 |
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| Recrystallization of amorphous ion implanted silicon carbide after thermal annealing |
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| S. Miro1J.-M. Costantini1S. Sorieul2L. Gosmain1L. Thomé3 |
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| (2012) |
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| Single crystals of 6H-SiC were implanted at room temperature with 4-MeV Au ions to a fluence of 1015cm 2. Raman spectra showed that full amorphization was achieved. The recrystallization process was studied by micro-Raman spectrometry after isochronal thermal annealing between 700 and 1500 C. The spectra permitted the evolution upon annealing of Si-C bonds, and also of Si-Si and C-C bonds, to be followed. Amorphous phase relaxation takes place below 700 C; then recrystallization of the 6H polytype sets in at 700 C. At 900 C crystallites with different crystalline states are formed. Moreover, Raman spectra provide evidence of graphitic nanocluster formation at 1500 C. |
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| 1: | SRMP - Service de recherches de métallurgie physique |
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| 2: | CENBG - Centre d'Etudes Nucléaires de Bordeaux Gradignan |
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| 3: | CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse |
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| INSTRU CSNSM PCI |
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| Subject(s) | : | Sciences of the Universe/Earth Sciences/Mineralogy |
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| SiC – Raman spectroscopy – recrystallization – irradiation effects |
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| in2p3-00739573, version 1 | |
| http://hal.in2p3.fr/in2p3-00739573 | |
| oai:hal.in2p3.fr:in2p3-00739573 | |
| From: Nathalie Martin | |
| Submitted for: | |
| Submitted on: Monday, 8 October 2012 14:49:44 | |
| Updated on: Friday, 16 November 2012 17:24:11 | |
