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First experience with radiation-hard active sensors in 180 nm HV CMOS technology
Muenstermann D., Peric I., Garcia-Sciveres M., Rozanov A., Wermes N.
TWEPP 2012 Topical Workshop on Electronics for Particle Physics, Oxford : Royaume-Uni (2012) - http://hal.in2p3.fr/in2p3-00757574
Sciences de l'ingénieur/Electronique
Sciences de l'ingénieur/Micro et nanotechnologies/Microélectronique
First experience with radiation-hard active sensors in 180 nm HV CMOS technology
D. Muenstermann, I. Peric, M. Garcia-Sciveres, A. Rozanov1, N. Wermes
1 :  CPPM - Centre de Physique des Particules de Marseille
http://marwww.in2p3.fr/
CNRS : UMR7346 – IN2P3 – Université de la Méditerranée - Aix-Marseille II
163, avenue de Luminy - Case 902 - 13288 Marseille cedex 09
France
We explore the concept of using a deep-submicron HV CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and discriminators, but still require a traditional (pixel or strip) readout chip. This approach yields most advantages of MAPS (improved resolution, reduced cost and material budget, etc.), without the complication of full integration on a single chip. After outlining the design of the HV2FEI4 test ASIC, characterization results and first experience obtained with pixel and strip readout will be shown before discussing future prospects of active sensors

Communications sans actes
19/09/2012

TWEPP 2012 Topical Workshop on Electronics for Particle Physics
Oxford
Royaume-Uni
17/09/2012
21/09/2012
D. Muenstermann