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Philosophical Magazine Letters 92 (2012) 633-639
Recrystallization of amorphous ion implanted silicon carbide after thermal annealing
S. Miro1, J.-M. Costantini1, S. Sorieul2, L. Gosmain1, L. Thomé3
(2012)

Single crystals of 6H-SiC were implanted at room temperature with 4-MeV Au ions to a fluence of 1015cm 2. Raman spectra showed that full amorphization was achieved. The recrystallization process was studied by micro-Raman spectrometry after isochronal thermal annealing between 700 and 1500 C. The spectra permitted the evolution upon annealing of Si-C bonds, and also of Si-Si and C-C bonds, to be followed. Amorphous phase relaxation takes place below 700 C; then recrystallization of the 6H polytype sets in at 700 C. At 900 C crystallites with different crystalline states are formed. Moreover, Raman spectra provide evidence of graphitic nanocluster formation at 1500 C.
1:  SRMP - Service de recherches de métallurgie physique
2:  CENBG - Centre d'Etudes Nucléaires de Bordeaux Gradignan
3:  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
INSTRU
CSNSM PCI
Sciences of the Universe/Earth Sciences/Mineralogy
SiC – Raman spectroscopy – recrystallization – irradiation effects