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Recrystallization of amorphous ion implanted silicon carbide after thermal annealing
Miro S., Costantini J.-M., Sorieul S., Gosmain L., Thomé L.
Philosophical Magazine Letters 92 (2012) 633-639 - http://hal.in2p3.fr/in2p3-00739573
Sciences of the Universe/Earth Sciences/Mineralogy
Recrystallization of amorphous ion implanted silicon carbide after thermal annealing
S. Miro1, J.-M. Costantini1, S. Sorieul2, L. Gosmain1, L. Thomé3
1:  SRMP - Service de recherches de métallurgie physique
CEA : DEN/DMN
CEA Saclay 91191 Gif sur Yvette
France
2:  CENBG - Centre d'Etudes Nucléaires de Bordeaux Gradignan
http://www.cenbg.in2p3.fr/
CNRS : UMR5797 – IN2P3 – Université Sciences et Technologies - Bordeaux I
Chemin du Solarium - BP 120 - 33175 Gradignan Cedex
France
3:  CSNSM - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse
http://www-csnsm.in2p3.fr/
CNRS : UMR8609 – IN2P3 – Université Paris XI - Paris Sud
batiments 104 et 108 - 91405 Orsay Campus
France
INSTRU
CSNSM PCI
Single crystals of 6H-SiC were implanted at room temperature with 4-MeV Au ions to a fluence of 1015cm 2. Raman spectra showed that full amorphization was achieved. The recrystallization process was studied by micro-Raman spectrometry after isochronal thermal annealing between 700 and 1500 C. The spectra permitted the evolution upon annealing of Si-C bonds, and also of Si-Si and C-C bonds, to be followed. Amorphous phase relaxation takes place below 700 C; then recrystallization of the 6H polytype sets in at 700 C. At 900 C crystallites with different crystalline states are formed. Moreover, Raman spectra provide evidence of graphitic nanocluster formation at 1500 C.

Article in peer-reviewed journal
2012
Philosophical Magazine Letters (Philos. Mag. Lett.)
Publisher Taylor & Francis: STM, Behavioural Science and Public Health Titles
ISSN 0950-0839 (eISSN : 1362-3036)
92
633-639

CSNSM PCI
SiC – Raman spectroscopy – recrystallization – irradiation effects