243 articles – 3636 Notices  [english version]
.:. Consultation > Par auteurs du labo > Clerc .:.
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UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si.
Halbwax M., Rouviere M., Zheng Y., Debarre D., H. Nguyen L. et al
Optical Materials 27 (2005) 822-826 [hal-00020246 - version 1]
Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition
Halbwax M., Bouchier D., Yam V., Débarre D., H. Nguyen L. et al
Journal of Applied Physics 064907 (2005) 97 [hal-00005804 - version 1]
Kinetics of the heteroepitaxial growth of Ge layer at low temperature on Si(001) in UHV-CVD.
Halbwax M., Yam V., Clerc C., Zheng Y., Debarre D. et al
Physica Status Solidi A 201 (2004) 329-332 [hal-00087081 - version 1]
Mechanical properties and in vitro degradation of bioabsorbable self-expanding braided stents
Nuutinen J.P., Clerc C., Reinikainen R., Tormala P.
Journal of Biomaterials Science Polymer Edition 14 (2003) 255-266 [in2p3-00013985 - version 1]
Effect of Ge-dots buried below the interface on the transport properties of Schottky diodes
Hattab A., Dufaye F., Meyer F., Vy Y., Vinh Le T. et al
Dans Physica E - International Conference on Superlattices Nano-Structures and Nano-Devices ICSNN 2002, France [in2p3-00013947 - version 1]
Plasma-enhanced chemical vapor deposition of SiO$_2$ from a Si(CH$_3)_3$Cl precursor and mixtures Ar/O$_2$ as plasma gas
Barranco A., Cotrino J., Yubero F., Girardeau T., Camelio S. et al
Journal of Vacuum Science and Technology A 21 (2003) 900-905 [in2p3-00013943 - version 1]
Study of surface roughening of tensily strained Si$_(1-x-y)$Ge$_x$C$_y$ films grown by ultra high vacuum-chemical vapor deposition
Calmes C., Bouchier D., Debarre D., Le Thanh V., Clerc C.
Thin Solid Films 428 (2003) 150-155 [in2p3-00013771 - version 1]
Analysis of the plasma produced by pulsed reactive crossed-beam laser ablation of La$_(0.6)$Ca$_(0.4)$CoO$_3$
Montenegro M.J., Clerc C., Lippert T., Muller S., Willmott P.R. et al
Applied Surface Science 208-209 (2003) 45-51 [in2p3-00022307 - version 1]
Effect of gamma, ethylene oxide, electron beam, and plasma sterilization on the behaviour of SR-PLLA fibres in vitro
Nuutinen J.P., Clerc C., Virta T., Tormala P.
Journal of Biomaterials Science Polymer Edition 13 (2002) 1325-1336 [in2p3-00022305 - version 1]
Gas-phase mechanism in the growth of ZrC$_y$N$_(1-y)$ thin films by pulsed reactive crossed-beam laser ablation
Spillmann H., Clerc C., Dobeli M., Willmott P.R.
Applied Surface Science 197-198 (2002) 304-311 [in2p3-00012840 - version 1]
Diode-pumped femtosecond oscillators using ultra-broad-band Yb-doped crystals and mode-locked using low-temperature grown or ion implanted saturable-absorber mirrors
Druon F., Valentine G.J., Chenais S., Raybaut P., Balembois F. et al
The European Physical Journal Applied Physics 20 (2002) 177-182 [in2p3-00012652 - version 1]
Surface roughening of tensilely strained Si$_(1-x-y)$Ge$_x$C$_y$ films grown by ultrahigh vacuum chemical vapor deposition
Calmes C., Bouchier D., Debarre D., Clerc C.
Applied Physics Letters 81 (2002) 2746-2748 [in2p3-00012021 - version 1]
Fabrication of UV-transparent Si$_x$O$_y$N$_z$ membranes with a low frequency PECVD reactor
Danai K., Bosseboeuf A., Clerc C., Gousset C., Julie G.
In Sensors and Actuators A - E-MRS Proceedings of Symposium J: Materials in Microtechnologies and Microsystems, France [in2p3-00011897 - version 1]
Synthesis of SiO$_2$ and SiO$_x$C$_y$H$_z$ thin films by microwave plasma CVD
Barranco A., Cotrino J., Yubero F., Espinos J.P., Benitez J. et al
Thin Solid Films 401 (2001) 150-158 [in2p3-00011200 - version 1]
Reduced magnetic moment per atom in small Ni and Co clusters embedded in AlN
Zanghi D., Teodorescu C.M., Petroff F., Fischer H., Bellouard C. et al
Journal of Applied Physics 90 (2001) 6367-6373 [in2p3-00011086 - version 1]
Structure and low-temperature thermal relaxation of ion-implanted germanium
Glover C.J., Ridgway M.C., Yu K.M., Foran G.J., Clerc C. et al
In Journal of Synchrotron Radiation - International Conference on X-Ray Absorption Fine Structure 11 XAFS XI, Japan [in2p3-00010366 - version 1]
Implantation-induced disorder in amorphous Ge: production and relaxation
Ridgway M.C., Glover C.J., Desnica-Frankovic I.D., Furic K., Yu K.M. et al
In Nuclear Instruments and Methods in Physics Research B - Ion Beam Modification of Materials International Conference 12, Brazil [in2p3-00010364 - version 1]
MeV gold irradiation induced damage in alpha -quartz: competition between nuclear and electronic stopping
Toulemonde M., Ramos S.M.M., Bernas H., Clerc C., Canut B. et al
Dans Nuclear Instruments and Methods in Physics Research B - Materials Science with Ion Beams E-MRS 2000 Spring Meeting Symposium R., France [in2p3-00010360 - version 1]
Structural-relaxation-induced bond length and bond angle changes in amorphized Ge
Glover C.J., Ridgway M.C., Yu K.M., Foran G.J., Desnica-Frankovic D. et al
Physical Review B 63 (2001) 073204-1-073204-4 [in2p3-00008530 - version 1]
Ion-dose-dependent microstructure in amorphous Ge
Ridgway M.C., Glover C.J., Yu K.M., Foran G.J., Clerc C. et al
Physical Review B 61 (2000) 12586-12589 [in2p3-00005565 - version 1]